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Showing results 1 to 14 of 14

Issue Date	Title Author(s) Journal	View
2006-12	Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor Kang, Jae Wook ; Park, Kyung Won ; Park, Byung Nam ; Moon, Kyo Ho ; Choi, Sie Young ; Shon, Young-Soo Molecular Crystals and Liquid Crystals, v.459, no.1, pp.157 - 165, 2006-12	679
2006-12	Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor Kang, Jae Wook ; Park, Kyung Won ; Park, Byung Nam ; Moon, Kyo Ho ; Choi, Sie Young ; Shon, Young-Soo Molecular Crystals and Liquid Crystals, v.459, no.1, pp.157 - 165, 2006-12	70
2011-08	Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors Son, Dae-Ho ; Kim, Dae-Hwan ; Kim, Jung-Hye ; Sung, Shi-Joon ; Jung, Eun-Ae ; Kang, Jin-Kyu Thin Solid Films, v.519, no.20, pp.6815 - 6819, 2011-08	460
2012	Effect of Zr Addition on Sol-Gel Processed InZrZnO Thin-Film Transistor Kim, Dae-Hwan ; Son, Dae-Ho ; Sung, Shi-Joon ; Kim, Jung-Hye ; Kang, Jin-Kyu Molecular Crystals and Liquid Crystals, v.564, no.1, pp.130 - 137, 2012	6
2016-08	Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor Jeong, Jaewook ; Kim, Joonwoo ; Kim, Donghyun ; Jeon, Heonsu ; Jeong, Soon Moon ; Hong, Yongtaek AIP Advances, v.6, no.8, 2016-08	632
2010	Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process Park, Mi Sun ; Lee, Doo Hyoung ; Bae, Eun Jin ; Kim, Dae-Hwan ; Kang, Jin Gyu ; Son, Dae-Ho ; Ryu, Si Ok Molecular Crystals and Liquid Crystals, v.529, pp.137 - 146, 2010	520
2010	Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process Park, Mi Sun ; Lee, Doo Hyoung ; Bae, Eun Jin ; Kim, Dae-Hwan ; Kang, Jin Gyu ; Son, Dae-Ho ; Ryu, Si Ok Molecular Crystals and Liquid Crystals, v.529, pp.137 - 146, 2010	49
2015-09	Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode Kim, Joonwoo ; Myung, Sung ; Noh, Hee-Yeon ; Jeong, Soon Moon ; Jeong, Jaewook AIP Advances, v.5, no.9, 2015-09	656
2010-11	High performance and the low voltage operating InGaZnO thin film transistor Son, Dae-ho ; Kim, Dae-Hwan ; Sung, Shi-Joon ; Jung, Eun-Ae ; Kang, Jin-Kyu Current Applied Physics, v.10, no.4, pp.E157 - E160, 2010-11	635
2011-11-10	Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors Jeong, J. ; Kim, J. ; Lee, G. J. ; Choi, B. -D. Electronics Letters, v.47, no.23, pp.1295 - 1297, 2011-11-10	636
2011-11-10	Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors Jeong, J. ; Kim, J. ; Lee, G. J. ; Choi, B. -D. Electronics Letters, v.47, no.23, pp.1295 - 1297, 2011-11-10	27
2015-11	Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment Kim, Joonwoo ; Jeong, Soon Moon ; Jeong, Jaewook Japanese Journal of Applied Physics, v.54, no.11, 2015-11	682
2007-01	Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature Song, Ju-Il ; Park, Jae-Soung ; Kim, Howoon ; Heo, Young-Woo ; Lee, Joon-Hyung ; Kim, Jeong-Joo ; Kim, G. M. ; Choi, Byeongdae American Institute of Physics, 2007-01	532
2015-11-19	Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer Kim, J. ; Jeong, S. M. ; Jeong, J. Electronics Letters, v.51, no.24, pp.2047 - 2048, 2015-11-19	543

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